irradiation dose meaning in Chinese
辐照剂量
照射剂量
照射量
照射损伤
Examples
- At the dose rate of 1 ~ 3 gy / min , their tolerant capacity were ranked from high to low as : one year dormant plant > dry dormant seed > one year shoot > wet cold - stratified seed , their irradiation dose were suggested as 75 - 100gy , 50 ~ 100gy , 30 ~ 50gy , 30 ~ 40gy , respectively
在剂量率为1 3gy min时，按照耐受性由高到低依次是：一年生休眠植株休眠干种子一年生枝条解除休眠湿种子。它们的适宜辐射剂量分别是：一年生休眠植株， 75 100gy ；休眠干种子， 50 100gy ；一年生枝条， 30 50gy ；解除休眠湿种子， 30 40gy 。 - Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically
在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。 - The refractive index and the changing behaviour of the a - sic : h films were calculated by using uv - vis - nir spectroscopy interference wave and it was found that the hydrogen content and ir transmittance were decreased with y rays irradiation dose . lt is very interesting that the sp ' c - h bonds were observed by the raman spectra for the first time and expand the application scopes of raman spectroscopy in structure analyse fields
根据uv ? vis ? nir光谱中的干涉条纹，计算出了y射线辐照下a - sic ： h薄膜的折射率及其变化趋势，并由此得出y射线辐照导致其氢含量变小及红外透过率变小的结论。有趣的是：还首次用raman光谱观察到了dlc薄膜中sp ~ 3c - h键随辐照剂量改变的变化规律，扩大了其在结构分析领域中的应用。